Method of fabricating an ultra-short channel field effect transi

Details Method of fabricating an ultra-short channel field effect transi Method of fabricating an ultra-short channel field effect transi

1992-12-18

1994-08-16

Thomas, Tom

Fishing, trapping, and vermin destroying

437200, 437203, 437913, H01L 21265

Patent

active

053386981

ABSTRACT:
An ultra-short channel field effect transistor provides a combination of a shallow junction for injection of carriers into a conduction channel and a Schottky barrier below the shallow junction with a lowered barrier height to reduce the depletion region and punch-through effects. A preferred method of fabricating this structure includes both etching and metal deposition selectively on only semiconductor material, allowing use of only a single patterning step with registration tolerances comparable to channel length while allowing extremely high integration density.

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patent: 4963502 (1990-10-01), Teng et al.
patent: 5079182 (1992-01-01), Ilderem et al.

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