Ion-implantation of wiring electrodes of a semiconductor device

Details Ion-implantation of wiring electrodes of a semiconductor device Ion-implantation of wiring electrodes of a semiconductor device

1988-12-23

1990-07-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 35, 437957, H01L 21265, H01L 2128

Patent

active

049421387

ABSTRACT:
An ion-implantation method for wiring electrodes of a semiconductor device comprises irradiating the wiring electrodes with ion beams from at least two directions to prevent occurrence of hillocks.

REFERENCES:
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4704367 (1987-11-01), Alvis et al.
Kamli et al., "Ion Implanted Double Level Metal Process", EDM Tech. Digest (1984), pp. 138-141.

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