Method and means for heat treating semiconductor material using

Details Method and means for heat treating semiconductor material using Method and means for heat treating semiconductor material using

1981-03-02

1982-10-26

Albritton, C. L.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

148 15, 219354, H05B 100

Patent

active

043563848

ABSTRACT:
Apparatus for annealing semiconductor wafers includes a support for receiving the wafers and resistive heaters for heating the wafers by thermal conduction through the support or by convection. A high intensity arc lamp scans the heated wafers thereby raising the temperature sufficiently for heat treating. The process is simple, rapid, efficient, and does not create damaging thermal stresses in the wafers. The high temperature and short time treatment enables material properties unobtainable with conventional thermal processes.

REFERENCES:
patent: 3049608 (1962-08-01), Greene
patent: 3520055 (1970-07-01), Jannett
patent: 3742181 (1973-06-01), Costello
patent: 3764772 (1973-10-01), Matuschek
patent: 3868488 (1975-02-01), Kobayashi et al.
patent: 4219721 (1980-08-01), Kamen et al.
patent: 4278867 (1981-07-01), Tan
T. Itoh, et al., "Pulsed E-B Apparatus and Annealing of Ion-Implanted Silicon", vol. 128 No. 9, pp. 2032-2034, J. Electrochem. Soc.: Solid-State Science and Technology, Sep. 1981.

Affiliated with

Also associated with

Rating

Method and means for heat treating semiconductor material using does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and means for heat treating semiconductor material using , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and means for heat treating semiconductor material using will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-949734