Chemical vapor deposition method, and chemical vapor deposition

Details Chemical vapor deposition method, and chemical vapor deposition Chemical vapor deposition method, and chemical vapor deposition

1992-11-24

1994-08-16

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118733, C23C 1600

Patent

active

053383630

ABSTRACT:
In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes.

REFERENCES:
patent: 5000113 (1991-03-01), Wang
Lueger (Technological Encyclopedia), 4th ed., vol. 16, p. 488, "Lexikon Der Technik", K. Schiefer.

Affiliated with

Also associated with

Rating

Chemical vapor deposition method, and chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical vapor deposition method, and chemical vapor deposition , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition method, and chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-948686