High efficiency gallium arsenide impatt diodes

Details High efficiency gallium arsenide impatt diodes High efficiency gallium arsenide impatt diodes

1975-01-02

1976-10-12

James, Andrew J.

Oscillators

Relaxation oscillators

357 12, 357 15, 357 89, 331107G, H01L 2990, H01L 2988, H01L 2948, H01L 2956

Patent

active

039861929

ABSTRACT:
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

REFERENCES:
patent: 3808555 (1974-04-01), Goedbloed
patent: 3814997 (1974-06-01), Takahashi et al.
patent: 3836990 (1974-09-01), Harth
patent: 3896473 (1975-07-01), DiLorenzo et al.
patent: 3896479 (1975-07-01), DiLorenzo et al.
patent: 3897276 (1975-07-01), Kondo
patent: 3904449 (1975-09-01), DiLorenzo et al.
patent: 3909119 (1975-09-01), Wolley

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