Light-emitting semiconductor device and method of fabricating sa

Details Light-emitting semiconductor device and method of fabricating sa Light-emitting semiconductor device and method of fabricating sa

1980-05-30

1982-02-16

James, Andrew J.

357 17, 357 68, 357 67, 357 71, H01L 2906, H01L 2348, H01L 2944

Patent

active

043162088

ABSTRACT:
A light-emitting semiconductor device of the type having a substrate, a first layer of a semiconductor on the substrate and a second layer of a different conductivity on the first layer. The second layer is selectively voided so as to give a recess and leave the first layer uncovered in a region serving as the bottom of the recess. An ohmic electrode layer is selectively formed on the second layer so as to extend into the recess and contact with the uncovered region of the first layer, and another ohmic electrode layer is selectively formed on the second layer so as to be separated from the former electrode layer. A solder bump is built up on the first electrode layer to fill up the recess and another solder bump on the second electrode layer so as to be separated from the former solder bump. Selective voiding of the second layer is accomplished by initially covering the entire area of the first layer with the second layer and then selectively slotting the second layer to a depth greater than the thickness of the second layer.

REFERENCES:
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patent: 3384793 (1968-05-01), Moriyama
patent: 3517278 (1970-06-01), Hager
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patent: 3593070 (1971-07-01), Reed
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patent: 4097887 (1978-06-01), Kalkbrenner
patent: 4097890 (1978-06-01), Morris et al.
patent: 4122486 (1978-10-01), Ono et al.

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