Electric heating – Metal heating – By arc
Patent
1978-12-20
1982-02-16
Albritton, C. L.
Electric heating
Metal heating
By arc
219121LM, 219121LE, 219121LF, 219121LB, 219121LT, B23K 2700
Patent
active
043160743
ABSTRACT:
A laser system is disclosed for facilitating transient surface heating and/or melting and regrowth of amorphous, polycrystalline or imperfect crystalline semiconductor wafer material. This system also has specific application to gettering of impurities and the annealing-out of defects within a semiconductor wafer. In the system, a number of circular target-wafers are arranged around the periphery of a turntable. The turntable rotates while a simple, slow-moving beam-delivery system moves radially with respect to the turntable delivering a helical scan which may also be in the form of a multiple-track. Use of the turntable with a multiple wafer load allows efficient batch-processing. Blocking masks may be employed when it is desired to irradiate only selected areas of the semiconductor substrates.
REFERENCES:
patent: 3404254 (1968-10-01), Jones
patent: 3420719 (1969-01-01), Potts
patent: 3518925 (1970-07-01), Chitayat
patent: 3622742 (1971-11-01), Cohen et al.
patent: 3663795 (1972-05-01), Myer
patent: 3844638 (1974-10-01), Lingenfelder et al.
patent: 4015100 (1977-03-01), Gnanamuthu et al.
patent: 4038663 (1977-07-01), Day et al.
patent: 4079230 (1978-03-01), Miyauch et al.
patent: 4081654 (1978-03-01), Mracek
patent: 4110594 (1978-08-01), May
patent: 4128752 (1978-12-01), Gravel
patent: 4131487 (1978-12-01), Pearce et al.
patent: 4131782 (1978-12-01), Einstein et al.
patent: 4144180 (1978-09-01), Kayanuma
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4154625 (1978-05-01), Golovchenko et al.
Kachurin et al., "Annealing of Implanted Layers by a Scanning _Laser Beam", Sov. Phys. Semicond., vol. 10, No. 10, Oct. 1976, pp. 1128-1129.
Arrabito et al., "Laser Perforation Technique", IBM Tech. Disc. Bull., vol. 13, No. 10, Mar. 1971, p. 3098.
Aeschlimann et al., "Automated Welding of Minute Parts", Laser Focus, vol. 12, No. 3, pp. 33-36, Mar. 1976.
Lever, "Background Heating for Laser Annealing", IBM Tech. Disc. Bull., vol. 21, No. 10, Mar. 1979, p. 4040.
Hovel, "Laser Annealing and Diffusion Definition Using Metal Layers", IBM Tech. Disc. Bull., vol. 21, No. 10, Mar. 1979, p. 4285.
Albritton C. L.
Quantronix Corporation
LandOfFree
Method and apparatus for laser irradiating semiconductor materia does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for laser irradiating semiconductor materia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for laser irradiating semiconductor materia will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-943754