Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1997-09-09

2000-02-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, 372 26, H01S 3085

Patent

active

060211482

ABSTRACT:
A semiconductor laser device in which a semiconductor laser emitting laser light and a light modulator modulating the laser light are integrated on a compound semiconductor substrate, includes a hole trapping layer for suppressing a reactive current that is generated when the semiconductor laser is operated and that does not contribute to laser oscillation. The hole trapping layer has a first region in the semiconductor laser and a second region in the light modulator. The hole trapping layer has a high carrier concentration and a low resistance and is discontinuous between the semiconductor laser and the light modulator, so that isolation between the laser and the modulator is increased, whereby a high-frequency signal applied to the light modulator is prevented from flowing through the hole trapping layer into the laser. Therefore, even when long-distance transmission is carried out using the semiconductor laser device, deterioration of transmitted wave is suppressed, resulting in satisfactory transmission characteristics.

REFERENCES:
patent: 4563765 (1986-01-01), Tsang et al.
patent: 4759023 (1988-07-01), Yamaguchi
patent: 5305343 (1994-04-01), Allovon et al.
patent: 5481559 (1996-01-01), Kawamura
Aoki et al., "InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated With A DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.

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