Process for fabricating complementary contactless vertical bipol

Details Process for fabricating complementary contactless vertical bipol Process for fabricating complementary contactless vertical bipol

1989-08-29

1991-05-07

James, Andrew J.

357 35, 357 49, 357 56, 357 59, H01L 2702, H01L 2972, H01L 2712

Patent

active

050141074

ABSTRACT:
A complementary NPN and PNP contactless vertical transistor structure is formed by a process that includes the steps of providing: (1) a buried layer and P- tub for NPN; (2) a channel stopper for NPN, and a buried layer for PNP; (3) isolation oxide for NPN and PNP; (4) a sink for NPN, and a ground for PNP; (5) a base for NPN, and a sink for PNP; (6) a base for PNP; (7) a N+ poly implant for NPN emitter and PNP extrinsic base; (8) a P+ poly implant for NPN extrinsic base and PNP emitter; (9) poly definition; (10) silicide exclusion for resistors and diodes; (11) contacts; (12) first metal; (13) vias; (14) second metal; and (15) scratch protection.

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