Semiconductor device for use in a hybrid LSI circuit

Details Semiconductor device for use in a hybrid LSI circuit Semiconductor device for use in a hybrid LSI circuit

1990-03-07

1991-05-07

Mintel, William

357 64, 357 90, H01L 2702

Patent

active

050141066

ABSTRACT:
A semiconductor device for use in a hybrid LSI circuit is disclosed which comprises MOSFETs and at least two bipolar transistor--all formed on the same semiconductor substrate. More specifically, p.sup.+ -type buried diffusion layers and p.sup.+ -type buried diffusion layers are formed on a P-type semiconductor substrate. An N-type epitaxial layer is formed on these buried layers. N-type well-regions and a P-type well-region are formed in the selected portions of the N-type epitaxial layer. A P-channel MOSFET and an N-channel MOSFET are formed in the N-type well-region and the P-type well-region, respectively. A first bipolar transistor is formed on the N-type epitaxial layer. A second bipolar transistor is formed on the N-type well-region which has an impurity concentration higher than that of the N-type epitaxial layer.

REFERENCES:
patent: 4884117 (1989-11-01), Neppl et al.
patent: 4887142 (1989-12-01), Bertotti

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