MOSFET-gated bipolar transistors and thyristors with both turn-o

Details MOSFET-gated bipolar transistors and thyristors with both turn-o MOSFET-gated bipolar transistors and thyristors with both turn-o

1982-04-01

1991-05-07

Hille, Rolf

357 234, 357 43, 357 86, H01L 2910, H01L 2974, H01L 2702, H03K 326

Patent

active

050141023

ABSTRACT:
MOSFET-gated bipolar transistor and thyristor integrated devices combining, as the respective turn-on and turn-off control devices, an enhancement mode MOSFET and a depletion mode MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The conduction channel of the depletion mode MOSFET is preferably an implanted region. With gate voltage of appropriate polarity applied, the depletion mode MOSFET is non-conducting and the enhancement mode MOSFET is conducting, biasing the included bipolar transistor or thyristor into conduction. With zero gate voltage applied, the depletion mode MOSFET conducts and the enhancement mode MOSFET is non-conducting, turning off the included bipolar transistor or thyristor. Significantly, only a single polarity gate input signal is required.

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