Dynamic RAM cell with trench capacitor and trench transistor

Details Dynamic RAM cell with trench capacitor and trench transistor Dynamic RAM cell with trench capacitor and trench transistor

1990-03-08

1991-05-07

Hille, Rolf

Fishing, trapping, and vermin destroying

357 53, 357 84, 437 52, H01L 2968, H01L 2940, H01L 2504

Patent

active

050140990

ABSTRACT:
A dynamic random access memory cell has a storage capacitor and an access transistor formed on the sidewalls of a trench etched into the face of a silicon bar. The storage capacitor uses the sidewalls of the trench as the storage node, and uses a polysilicon plug as a common or grounded node. This polysilicon plug is part of a grounded field plate that surrounds the cell on the face and functions to provide isolation between cells. The channel of the access transistor is formed in a minor trench using the upper part of the sidewall of only one side of the major trench; an upper edge of the capacitor storage node functions as the source region of the transistor, while a buried N+ region on the face adjacent the trench is the drain. The gate of the transistor is a conductor extending along the face over the field plate except where it extends down into the minor trench at the channel area.

REFERENCES:
patent: 4651184 (1987-03-01), Malhi
patent: 4751558 (1988-06-01), Kenney
patent: 4830978 (1989-05-01), Teng et al.
patent: 4916524 (1990-04-01), Teng et al.

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