Optical semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257446, 257514, 257517, 257519, H01L 2714

Patent

active

055980228

ABSTRACT:
The plurality of functioning circuits are formed in a plurality of P-type well regions formed on a remaining part of said low concentration N-type layer, by isolating from each other. According to the present invention, the photoelectric current from the PIN photodiode can be processed in the functioning circuits formed in the P-type well regions by isolating from each other, so that the interference between the functioning circuits can be prevented and also the shift of the current flowing in each functioning circuit due to the impossibility of the high concentration N-type semiconductor layer to be grounded can be prevented. Therefore, the malfunction of the integrated PIN photodiode sensor can be prevented, and the PIN photodiode sensor can operate with high speed because the distributed resistance between the functioning circuits is decreased.

REFERENCES:
patent: 4831430 (1989-05-01), Umeji
patent: 5410175 (1995-04-01), Kyomasu et al.
Kyomasu et al, "Development of Integrated Silicon PIN Photodiode and Its Optical and Electrical Characteristics", Partial English Translation of Electronics, Information and Communication Society Paper C-11, vol. J74-C-11 No. 5, pp. 477-487, May 1991.
Kyomasu, "The Integrated Master Slice Type Transimpedance Amplifier Photosensors Using PIN-Bipolar Process", English Abstract, pp. 1-29, figures 1-15 no date.
Kyomasu et al, "Integrated high Speed Silicon Pin Photodiode Sensor", IEEE 1991, pp. 289-292 no month.

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