Optoelectronic integrated circuit with optical gate device and p

Details Optoelectronic integrated circuit with optical gate device and p Optoelectronic integrated circuit with optical gate device and p

1990-02-01

1991-05-07

Mintel, William

357 17, 357 16, 357 30, H01L 3112

Patent

active

050140965

ABSTRACT:
An optoelectronic integrated circuit including an optical bistable circuit comprises: an optical gate device responsive to a current injected to an active layer thereof and to a first ray transmitted through the active layer for emitting first and second light rays and for controlling intensity of the first light ray in accordance with the current; and a first phototransistor serially connected with the optical gate device so arranged to receive the second light ray for causing the current to flow through the optical gate device in response to the second light ray and a set signal light ray, the first phototransistor holding flowing of the current when the second light ray is emitted. This circuit can control the first light ray incident to the optical gate device in response to a set signal light ray applied to the first phototransistor. A second phototransistor may be included for stopping emission of light by the optical gate device in response to a reset signal light ray. Such a circuit can be used in an optical neural network as a light-switching device. The first light ray is applied to an optical gate device perpendicularly or horizontally with respect to the plane of the substrate thereof. The second light ray may be emitted by a light-emitting device serially connected with the optical gate.

REFERENCES:
patent: 3938173 (1976-02-01), Jackson et al.
patent: 3978343 (1976-08-01), Broderick et al.
Spiller, "PN Junctions as Nonlinear Material for Optical Data Processing," IBM Technical Disclosure Bulletin, vol. 12, No. 3, Aug. 1969, p. 400.
"Measurement of Gain and Absorption Spectra in AlGaAs Buried Heterostructure Lasers" by C. H. Henry, R. A. Logan, and F. R. Merritt, J. Appl. Phys. 51(6), Jun. 1980, pp. 3042-3050.
"GalnAsP/InP Surface Emitting Injection Lasers with Short Cavity Length" by H. Soda, Y. Motegi, and K. Iga, IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, pp. 1035-1041.

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