Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-09-13

1991-01-08

Epps, Georgia

Coherent light generators

Particular component circuitry

Optical pumping

372 45, 437129, H01S 319

Patent

active

049842447

ABSTRACT:
A semiconductor laser device is disclosed which comprises a semiconductor substrate, a striped mesa disposed on the substrate and having an active layer for laser oscillation, a current injection layer disposed on the striped mesa and having a width smaller than that of the striped mesa, and a burying layer disposed on both sides of the current injection layer so as to come into contact with the side walls of the current injection layer, the burying layer being capable of absorbing laser light produce in the active layer and of preventing current from flowing through the outside of the striped mesa.

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patent: 4852111 (1989-07-01), Hayakawa et al.
patent: 4868838 (1989-09-01), Yamamoto
Yamamoto et al., Appl. Phys. Lett. (Mar. 1, 1982), 40(5): 372-374.
European Search Report for EPC Application No. 89/309284.1, dated Jun. 22, 1990.
International Conference on Communications, Boston, Mass., Jun. 10th-14th, 1979, Conference Record, vol. 4, pp. 53.5.1-53.5.3, IEEE, New York.
Patent Abstracts of Japan, vol. 11, No. 374 (E-562), Dec. 5th, 1987.
11th IEEE International Semiconductor Laser Conference Digest, p. 144, Yamashita et al., Aug. 29-Sep. 1988.

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