Method of forming a Ga.sub.2 O.sub.3 dielectric layer

Details Method of forming a Ga.sub.2 O.sub.3 dielectric layer Method of forming a Ga.sub.2 O.sub.3 dielectric layer

1996-03-21

1997-01-28

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 31, 437 40, 148DIG118, H01L 21316

Patent

active

055977685

ABSTRACT:
A method of forming a dielectric layer on a supporting structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer including the step of depositing a layer of Ga.sub.2 O.sub.3, having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide with a melting point greater than 700.degree. C. above the sublimation temperature of the Ga.sub.2 O.sub.3. The evaporation can be performed by any one of thermal evaporation, electron beam evaporation, and laser ablation.

REFERENCES:
patent: 4859253 (1989-08-01), Buchanan et al.
patent: 5451548 (1995-09-01), Hunt et al.
patent: 5474851 (1995-12-01), Ganswein

Affiliated with

Also associated with

Rating

Method of forming a Ga.sub.2 O.sub.3 dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a Ga.sub.2 O.sub.3 dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a Ga.sub.2 O.sub.3 dielectric layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-941299