Method for detaching chips from a wafer

Fishing – trapping – and vermin destroying

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Details

437 21, 437227, 437231, 148DIG28, 148DIG50, 148DIG135, H01L 21301

Patent

active

055977669

ABSTRACT:
Method for detaching chips in the silicon layer of a SOI substrate, wherein trenches are etched between the chips down to the insulating layer of the SOI substrate. Spacers for the passivation of SiO.sub.2 layers of the chips are produced. Finally, the chips are detached by etching the insulating layer off.

REFERENCES:
patent: 4104786 (1978-08-01), Boah et al.
patent: 4978639 (1990-12-01), Hua et al.
patent: 5057450 (1991-10-01), Bronner et al.
patent: 5064771 (1991-11-01), Solomon
patent: 5071792 (1991-12-01), Van Vonno et al.
patent: 5244830 (1993-09-01), Kang et al.
patent: 5270265 (1993-12-01), Hemmenway et al.

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