Process of fabricating semiconductor device having capacitor inc

Details Process of fabricating semiconductor device having capacitor inc Process of fabricating semiconductor device having capacitor inc

1996-01-22

1997-01-28

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, 148DIG14, 148DIG138, H01L 2170

Patent

active

055977600

ABSTRACT:
Boundary layers of silicon nitride not greater than 1 nanometer thick are inserted between adjacent two phosphorous-doped polysilicon layers forming parts of an accumulating electrode of a capacitor so as to decrease the grain size of the polysilicon and, accordingly, increase the grain boundaries exposed to the surfaces of the phosphorous-doped polysilicon layers, and hot phosphoric acid selectively etches the grain boundaries, thereby increasing the surface area of the phosphorous-doped polysilicon layers.

REFERENCES:
patent: 5112773 (1992-05-01), Tuttle
patent: 5208479 (1993-05-01), Mathews et al.
patent: 5244842 (1993-09-01), Cathey et al.
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5444011 (1995-08-01), Taniguchi
patent: 5445986 (1995-08-01), Hirota
patent: 5488008 (1996-01-01), Kawamura

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