Fishing – trapping – and vermin destroying
Patent
1995-08-25
1997-01-28
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
437 27, 437 40, 437 41, H01L 218234
Patent
active
055977529
ABSTRACT:
In a method for manufacturing an LDD type semiconductor device, an insulating layer is formed on a semiconductor substrate of a first conductivity type, and an opening is formed in the insulating layer. Then, a first sidewall insulating layer is formed on a sidewall of the insulating layer, and a gate insulating layer is formed on the semiconductor substrate. Then, a gate electrode is buried in the opening. Then, the first sidewall insulating layer is removed, and impurities of a second conductivity type are introduced into the semiconductor substrate to form a low concentration impurity region in the semiconductor substrate. Then, the insulating layer is removed, and a second sidewall insulating layer is formed on a sidewall of the gate electrode. Finally, impurities of the second conductivity type are introduced into the semiconductor substrate to form a high concentration impurity region in the semiconductor substrate.
REFERENCES:
patent: 5141891 (1992-08-01), Arima et al.
patent: 5175119 (1992-12-01), Matsutani
patent: 5429956 (1995-07-01), Shell et al.
patent: 5434093 (1995-07-01), Chau et al.
patent: 5445983 (1995-08-01), Hong
Bowers Jr. Charles L.
NEC Corporation
Trinh Michael
LandOfFree
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