Method of forming field effect transistors relative to a semicon

Details Method of forming field effect transistors relative to a semicon Method of forming field effect transistors relative to a semicon

1995-08-09

1997-01-28

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40, H01L 21265

Patent

active

055977464

ABSTRACT:
A method of forming a field effect transistor relative to a semiconductor substrate, where the transistor has a gate which defines a resultant lateral expanse of semiconductive material therebeneath for provision of a transistor channel region, includes a) providing a conductive gate layer over a semiconductor substrate; b) patterning the conductive gate layer into a first gate block, the first gate block having a first lateral expanse which is greater than the resultant lateral expanse; c) providing an insulating dielectric layer over the first gate block; d) providing a patterned layer of photoresist over the first gate block and the insulating dielectric layer, the patterned photoresist comprising a photoresist block positioned over and within the first lateral expanse of the first gate block; e) with the patterned photoresist in place, etching the insulating dielectric layer selectively relative to the first gate block; f) after etching the insulating dielectric layer and with the patterned photoresist in place, etching the first gate block selectively relative to the insulating dielectric layer to define the transistor gate having a second lateral expanse adjacent the substrate which is equal to the resultant lateral expanse; and g) providing a conductivity enhancing impurity into the substrate adjacent the transistor gate. The invention has particular utility in fabrication of field effect transistors having an elevated source and an elevated drain. The invention also contemplates products produced by the above process.

REFERENCES:
patent: 5306657 (1994-04-01), Yang
patent: 5364807 (1994-11-01), Hwang

Affiliated with

Also associated with

Rating

Method of forming field effect transistors relative to a semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming field effect transistors relative to a semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming field effect transistors relative to a semicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-941099