Method of manufacturing a field effect transistor with improved

Details Method of manufacturing a field effect transistor with improved Method of manufacturing a field effect transistor with improved

1994-06-13

1997-01-28

Niebling, John

Fishing, trapping, and vermin destroying

437175, 437912, 437944, H01L 21265, H01L 2144

Patent

active

055977430

ABSTRACT:
A field effect transistor has (a) a channel layer formed by a non-doped first semiconductor material (b) an electron supply layer formed by a doped second semiconductor material having an electron affinity which is lower than the affinity of the first semiconductor material, and (c) a contact layer formed by a doped third semiconductor material having an electron affinity which is higher than the affinity of the second semiconductor material. These layers are successively formed on a substrate of semi-insulating semiconductor material. Ions are implanted and a surface side portion of the contact layer is removed in a region other than at active portions in order to retain at least a part at a substrate side of the contact layer. By this arrangement, an excellent isolation can be achieved without producing large steps due to the mesa shape. Leakage current is not produced. There is no deterioration of the pinch off characteristic and withstand voltage. Noise characteristics and output efficiencies are excellent. There are no interruptions at electrode forming portions and the yield of fabrication is improved.

REFERENCES:
patent: 4677457 (1987-06-01), Wolter
patent: 4916498 (1990-04-01), Berenz
patent: 5161235 (1992-11-01), Shur et al.
patent: 5162877 (1992-11-01), Mori
patent: 5166083 (1992-11-01), Bayraktaroglu

Affiliated with

Also associated with

Rating

Method of manufacturing a field effect transistor with improved does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a field effect transistor with improved , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a field effect transistor with improved will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-941071