Process for forming a recrystallized layer and diffusing impurit

Details Process for forming a recrystallized layer and diffusing impurit Process for forming a recrystallized layer and diffusing impurit

1995-02-17

1997-01-28

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 46, 148DIG1, H01L 21266

Patent

active

055977413

ABSTRACT:
A process for preparing a semiconductor device, in which a polycrystalline silicon film is formed on a monocrystalline semiconductor substrate and arsenic or phosphorus is injected as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer. The amorphous layer is heat-treated at a temperature of 600.degree. C. to 650.degree. C. to recrystallize the amorphous layer, thus forming a recrystallized layer having a grain size greater than that of the polycrystalline silicon film by solid phase growth. The recrystallized layer is heat-treated at a temperature of 800.degree. C. to 900.degree. C. to diffuse the impurity into the monocrystalline semiconductor substrate.

REFERENCES:
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 4939154 (1990-07-01), Shimbo
Sinke et al., "A comparison between . . . polycrystalline silicon solar cells", Solar Cells, vol. 20, No. 1, pp. 51-57, Feb. 1987.

Affiliated with

Also associated with

Rating

Process for forming a recrystallized layer and diffusing impurit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming a recrystallized layer and diffusing impurit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a recrystallized layer and diffusing impurit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-941049