Photomask and photomask blank

Details Photomask and photomask blank Photomask and photomask blank

1994-09-30

1997-01-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430321, 430322, 430369, G03F 900

Patent

active

055976670

ABSTRACT:
A photomask used in photolithography is characterized in that the photomask is provided with a transparent substrate having two opposite main surfaces and a light-shielding pattern formed on one main surface, that the other main surface includes a plurality of irregularly distributed concaves and convexes, and that a spacing and a height of the concaves and convexes are within a range from 50 to 1000 times a wavelength of light used in photolithography.

REFERENCES:
patent: 5338647 (1994-08-01), Nakagawa et al.
"NA and .sigma. Optimization for High NA I-Line Lithography", Koji Yamanaka et al., SPIE, vol. 1927, pp. 310-319 (1993).
"0.35 UM Lithography Using Off-Axis Illumination", Paul Luehrmann et al., SPIE, vol. 1927, pp. 103-123 (1993).
"New Resolution Enhancing Mask For Projection Lithography Based on In-Situ Off-Axis Illumination", Rainer PFORR et al., SPIE, vol. 1927, pp. 190-213 (1993).

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