Method for fabrication of a mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430311, 430323, 428428, G03F 900

Patent

active

055976662

ABSTRACT:
The present invention relates to a method for fabrication of a mask capable of stabilizing the size and the thickness thereof.
A method for fabrication of a mask according to the present invention comprises a step for successively depositing an oxide layer and a Cr layer on a quartz plate, a step for successively etching said oxide layer and said Cr layer by an E-beam, and a step for extending said oxide in volume by an oxidation process to form a phase-shifter.
Therefore, the size and thickness of a mask can easily be controlled by using an oxide instead of PMMA of the photosensitive film as a phase-shifter and endurability of a mask can be improved.

REFERENCES:
patent: 4360586 (1982-11-01), Flanders et al.
patent: 4459325 (1984-07-01), Nozawa et al.
patent: 4873163 (1989-10-01), Watakabe et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 5045417 (1991-09-01), Okamoto

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabrication of a mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabrication of a mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication of a mask will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-940596

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.