Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1997-01-10
2000-02-01
Brown, Glenn W.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324770, G01R 3126
Patent
active
060207531
ABSTRACT:
In a method of evaluating the reliability of a thin film transistor (TFT), time coefficient .beta., voltage coefficient d and temperature coefficient .phi..sub.0 are experimentally produced from -BT stress tests, and the life of a TFT under -BT stress conditions is evaluated using the following expression: ##EQU1## where .tau. represents the life time of the TFT, .DELTA.V.sub.th.tau. the tolerant threshold voltage shift amount of the TFT, t.sub.0 (1/.DELTA.V.sub.th0) constant, q elementary electric charge, k Boltzmann constant, T temperature, V.sub.0 gate voltage, and t.sub.0X the thickness of the gate oxide film.
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patent: 5650336 (1997-07-01), Eriguchi et al.
"Evaluation of Hot Carrier Effects in TFT By Emission Microscopy", Komori, Junko, et al., International Reliability Physics Proceedings, 1992, pp. 63-67. (month unavailable).
"Negative Bias Stress of MOS devices at High Electric Fields and Degradation of MNOS Devices", Jeppson, Kjell, et al., Journal of Applied Physics, vol. 28, No. 5, May 1977.
"Surface State Formation During Long-Term Bias-Temperature Stress Aging of Thin SiO.sub.2 -Si Interfaces", Shiono, Noboru, et al., Japanese Journal of Applied Physics, vol. 18, No. 6., Jun. 1979. pp. 1087-1095.
Brown Glenn W.
Mitsubishi Denki & Kabushiki Kaisha
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