Thin-film SOI-MOSFET with a body region

Details Thin-film SOI-MOSFET with a body region Thin-film SOI-MOSFET with a body region

1989-11-22

1992-06-23

Hille, Rolf

357 4, 357 233, 357 67, H01L 2701, H01L 2712, H01L 2910, H01L 2348

Patent

active

051250071

ABSTRACT:
An MOS field effect transistor comprises a channel region (6) of a first conductivity type formed in a semiconductor layer (3) on an insulator substrate (2), a source region (8) and a drain region (9) of a second conductivity type formed in contact with one and the other sides of the channel region (6) in the semiconductor layer (3), respectively, a body region (7) formed in contact with at least a part of the channel region (6) and a part of a periphery of the source region (8) in the semiconductor layer (3) and having a higher impurity concentration than that of the channel region (6), a gate electric thin film (4) and a gate electrode (5) formed on the channel region (6), and a conductor (14a) connected in common to the source region (8) and the body region (7).

REFERENCES:
patent: 4053916 (1983-03-01), Cricchi et al.
patent: 4054895 (1977-10-01), Ham
patent: 4106045 (1978-08-01), Nishi
patent: 4969023 (1990-11-01), Svedberg
patent: 4999691 (1991-03-01), Hsu et al.

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