Structure of a memory cell

Details Structure of a memory cell Structure of a memory cell

1998-06-09

2000-02-01

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

257324, 257641, 257645, H01L 2976

Patent

active

060206063

ABSTRACT:
A structure of a memory cell in a memory device is taking an interface between a silicon nitride layer and a oxide layer. The memory cell includes: a polysilicon layer on a substrate, a silicon nitride layer on the polysilicon layer, an oxide layer on the silicon nitride layer, and a conductor layer on the oxide layer. The order of forming the silicon nitride layer and the oxide layer can be reversed either for another alternative structure of the memory cell.

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