Method of making an integrated circuit comprising load resistors

Details Method of making an integrated circuit comprising load resistors Method of making an integrated circuit comprising load resistors

1989-03-16

1991-05-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 51, 437 59, 437 60, 437193, 437200, 437233, 437235, 437918, 357 51, H01L 2170

Patent

active

050136780

ABSTRACT:
In an integrated circuit containing MOS transistors and/or bipolar transistors, the load resistors, which are arranged as thin-film elements on the field oxide zones which separate the active transistor zones, consist of polycrystalline silicon which is formed simultaneously with gate electrodes and/or the emitter and base terminal zones of the bipolar transistors on a substrate which contains the integrated circuit. The structuring of the load resistors is carried by way of an oxide mask which serves as an etch stop during the structuring of the gate electrode composed of a double layer of polysilicon and a silicide of a refractory metal. As only the polysilicon of the gate layer without overlying silicide is used for the load resistors, the sheet resistance of the load resistors can be set independently of that of the gates.

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