Method for manufacture of semiconductor device

Details Method for manufacture of semiconductor device Method for manufacture of semiconductor device

1990-06-18

1991-05-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437 60, 437 31, 437917, 437918, 437162, H01L 21265

Patent

active

050136771

ABSTRACT:
A method for the manufacture of a semiconductor device, comprising the steps of forming ohmic contact portions at the same time, then forming a semiconductor layer on the entire surface including the open portions, and selectively introducing impurities by ion implantation into the contact portions of the semiconductor layer and isolated other element regions, thereby producing a transistor and other elements. This method results in the simultaneous production of a transistor and other elements and simplifies the steps of the process of manufacture.

REFERENCES:
patent: 4497106 (1985-05-01), Momma et al.
patent: 4839302 (1989-06-01), Kameyama et al.
patent: 4851362 (1989-07-01), Suzuki
patent: 4866000 (1989-09-01), Okita
patent: 4946798 (1990-08-01), Kawakatsu

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