Structure of MIS-type field effect transistor and process of fab

Details Structure of MIS-type field effect transistor and process of fab Structure of MIS-type field effect transistor and process of fab

1989-06-16

1991-05-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 236, 357 55, 437 38, 437 52, 437 47, 437 60, 437203, H01L 21265, H01L 21443, H01L 2166, H01L 2700

Patent

active

050136763

ABSTRACT:
For precise determination of a channel length of a MIS-type field effect transistor, two vertical cavities are formed spaced apart from each other by a land portion, two vertical portions of which provide source and drain regions formed by an ion implantation and spaced by a channel forming region doped with impurity atoms by an ion implantation for adjustment of the threshold voltage. In this way, the channel length is precisely determined during the formation of the source and drain regions since ion implantation allows better control of the edge profile than lithographic techniques provide.

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