Patent
1989-12-14
1991-01-08
James, Andrew J.
357 71, 357 68, H01L 2348
Patent
active
049840568
ABSTRACT:
A semiconductor integrated circuit device includes a tetraethylorthosilicate film between a TiN film and a field oxide film disposed. This structure greatly reduced the possibility of separation of films in the bonding structure and contact failure as part of a wire bonding structure.
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Fujimoto Hitoshi
Tsumura Kiyoaki
Huang Dang Xuan
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
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