Output sensor of charge transfer device

Details Output sensor of charge transfer device Output sensor of charge transfer device

1988-07-12

1991-01-08

James, Andrew J.

357 234, 357 235, 357 2312, H01L 2978, H01L 2910, H01L 2968

Patent

active

049840452

ABSTRACT:
An output sensor of a charge transfer device includes a well region of a second conductivity type having a low impurity concentration and formed in the surface area of a semiconductor substrate of a first conductivity type. A charge-sensing buried channel region of the first conductivity type is formed in part of the surface area of the well region, and a gate electrode is formed on the charge-sensing buried channel region via a gate insulation film. Further, source and drain regions of the second conductivity type are disposed on both sides of the charge-sensing buried channel region in a width direction thereof to constituted a charge-sensing MOS transistor. The charge-sensing buried channel region is formed continuously with a charge-transfer buried channel region buried in the well region.

REFERENCES:
patent: 4262217 (1981-04-01), Levine
patent: 4280068 (1981-06-01), Snijder
Philips Res. Lab (Redhill) An. Rev. (6B) 1978 pp. 17-18 R. J. Brewer.
Charge Transfer Devices, Academic Press Inc. Sequin and Tompsett 1975 pp. 47-61.
Solid-State Electronics, vol. 23, pp. 747-753 Pergamon Press, 1980; Chakravarti and Das.
IEEE Int. Electronics Device Meeting Tech. dig. pp. 610-612; R. J. Brewer; 1978.

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