Semiconductor memory and method of producing the same

Details Semiconductor memory and method of producing the same Semiconductor memory and method of producing the same

1988-05-17

1991-01-08

Hille, Rolf

357 234, 357 54, 357 59, H01L 2968, H01L 2910, H01L 2934, H01L 2904

Patent

active

049840380

ABSTRACT:
The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.

REFERENCES:
patent: 4434433 (1984-02-01), Nishizawa
patent: 4462040 (1984-07-01), Ho et al.
patent: 4713678 (1987-12-01), Womack et al.
patent: 4751557 (1988-06-01), Sunami et al.

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