Thin film semiconductor device with oxide film on insulating lay

Details Thin film semiconductor device with oxide film on insulating lay Thin film semiconductor device with oxide film on insulating lay

1988-12-21

1991-01-08

Mintel, William

357 237, 357 59, 357 2, 350338, 350336, 350339R, 350342, H01L 3300

Patent

active

049840339

ABSTRACT:
A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer over the pattern of the metal thin film by laser CVD.

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patent: 4834507 (1989-05-01), Kato et al.
patent: 4885616 (1989-12-01), Ohta
Ishizu et al., "Direct Pattern Writing of Silicon by Argon Laser Induced CVD", Proceedings of Symposium on Dry Process, (Oct. 24-25, 1985), Tokyo, pp. 13-18.
Baverle et al., "Ar.sup.+ Laser Induced Chemical Vapor Deposition of Si from SiH.sub.4 ", Applied Physics Letters, 40(9), May 1, 1982, pp. 819-821.
Coblenz, "Semiconductor Compounds", Electronic Buyers' Guide, Jun. 1958-Mid-Month, pp. R4-R5.

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