Semiconductor photodiode

Details Semiconductor photodiode Semiconductor photodiode

1989-01-17

1991-01-08

Hille, Rolf

357 30, 357 13, H01L 29161, H01L 2990, H01L 2714

Patent

active

049840320

ABSTRACT:
An APD includes a substrate formed of n.sup.+ -type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor, whose aluminum content ratio x is typically within a range from 0.1 to 0.3. A light absorbing layer is formed of an-type GaSb semiconductor on the substrate. An avalanche multiplication layer is formed of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconduct, whose aluminum content ratio x is from 0.02 to 0.1, typically 0.065, so that an ionization rate ratio of positive and negative carriers is essentially maximized by a resonant impact ionization phenomenon. A p.sup.+ -region is formed as a surface layer of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor on the avalanche multiplication layer or directly in the avalanche multiplication layer so as to form a pn junction. Electrodes are formed on the p-type region and the substrate so as to apply a bias voltage to the APD. A light to be detected is injected through the substrate via an opening in the substrate electrode, while producing no carriers therein, into the light absorbing layer. The avalanche multiplication layer generates resonant impact ionization with only the positive carriers from the light absorbing layer, so that low noise and fast operation of the APD is achieved. Furthermore, the APD structure of the invention allows for easy design of an APD.

REFERENCES:
patent: 4110778 (1978-08-01), Eden et al.
patent: 4203124 (1980-05-01), Gordon et al.
patent: 4403397 (1983-09-01), Bottka et al.
patent: 4561007 (1985-12-01), Webb
patent: 4656494 (1987-04-01), Kobayashi et al.
IEEE Journal of Quantum Electrons, vol. QE-17, No. 2, Feb. 1981, "Ga.sub.1-x Al.sub.x SB Avalanche Photodiodes: Resonant Impact Ionization with Very High Ratio of Ionization Coefficients", by O. Hildebrand et al., pp. 284-288.

Affiliated with

Also associated with

Rating

Semiconductor photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-938505