Vertical MOSFET DRAM

Details Vertical MOSFET DRAM Vertical MOSFET DRAM

1988-05-31

1991-01-08

Larkins, William D.

357 234, 357 55, H01L 27108

Patent

active

049840304

ABSTRACT:
A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.

REFERENCES:
patent: 4003036 (1977-01-01), Jeanne
patent: 4225879 (1980-09-01), Vinson
patent: 4271418 (1981-06-01), Hiltpold
patent: 4434433 (1984-02-01), Nishizawa

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