Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1981-07-29
1983-04-12
Demers, Arthur P.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C23C 1500
Patent
active
043797431
ABSTRACT:
In a sputtering apparatus comprising a main chamber for carrying out sputtering and a preliminary chamber for preliminarily processing a substrate prior to sputtering, a gate valve interposed between the chambers is opened with the pressure in the preliminary chamber is reduced lower than that in the main chamber after completion of the preliminary processing. The pressure reduction is carried out by reducing supply of a gas into the preliminary chamber by the use of a pressure control system coupled to the preliminary chamber. Preferably, the supply of the gas is bypassed through a valve to an exhausting system for the preliminary chamber. Alternatively, the pressure in the main chamber is made higher than that in the preliminary chamber after completion of the preliminary processing by squeezing an evacuation system for the main chamber to reduce the rate of evacuation. Supply of the gas into the preliminary chamber and evacuation of the main chamber may be simultaneously reduced.
REFERENCES:
patent: 3294670 (1966-12-01), Charschan
patent: 3521765 (1970-07-01), Kauffman et al.
patent: 4331526 (1982-05-01), Kuehnle
Nakatsukasa Masashi
Takahashi Nobuyuki
Anelva Corporation
Demers Arthur P.
LandOfFree
Sputtering apparatus comprising control means for preventing imp does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputtering apparatus comprising control means for preventing imp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputtering apparatus comprising control means for preventing imp will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-938183