Semiconductor device with oxide sidewall

Details Semiconductor device with oxide sidewall Semiconductor device with oxide sidewall

1990-07-23

1992-06-23

Mintel, William

357 49, 357 34, 357 55, H01L 2702

Patent

active

051247755

ABSTRACT:
A semiconductor device and method to reduce the size of bipolar transistors and decrease the number of steps required to fabricate the bipolar transistor by using a unitary contiguous oxide sidewall to separate a collector contact from the base, emitter and emitter contact. The device and method may also be used during the fabrication of BiCMOS devices.

REFERENCES:
patent: 4274909 (1981-06-01), Venkataraman et al.
patent: 4333227 (1982-06-01), Horng et al.
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4745087 (1988-05-01), Iranmanesh
patent: 4800171 (1989-01-01), Iranmanesh et al.
patent: 4926233 (1990-05-01), Hutter
patent: 4929570 (1990-05-01), Howell

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