Conductivity-modulation metal oxide semiconductor field effect t

Details Conductivity-modulation metal oxide semiconductor field effect t Conductivity-modulation metal oxide semiconductor field effect t

1990-08-07

1992-06-23

Mintel, William

357 86, 357 20, 357 39, 357 38, H01L 2900

Patent

active

051247739

ABSTRACT:
A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the N base. A source electrode electrically conducts the P base and the source. A first gate electrode insulatively covers a channel region defined by the N.sup.+ source layer in the P base. A P drain layer is formed on an opposite substrate surface. An N.sup.+ second source layer is formed in a P type drain layer by diffusion to define a second channel region. A second gate electrode insulatively covers the second channel region, thus providing a voltage-controlled turn-off controlling transistor. A drain electrode of the MOSFET conducts the P type drain and second source. When the turn-off controlling transistor is rendered conductive to turn off the MOSFET a "shorted anode structure" is temporarily formed wherein the N type base is short-circuited to the drain electrode, whereby case, the flow of carriers accumulated in the N type base into the drain electrode is facilitated to accelerate dispersion of carriers upon turn-off of the transistor.

REFERENCES:
patent: 4811072 (1989-03-01), Risberg
patent: 4912541 (1990-03-01), Baliga et al.

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