Semiconductor device

Details Semiconductor device Semiconductor device

1991-01-29

1992-06-23

Prenty, Mark

357 16, 357 58, 357 61, H01L 2972, H01L 29161, H01L 2912, H01L 2920

Patent

active

051247712

ABSTRACT:
A semiconductor device or a hot electron transistor being constructed such that an InAs base layer is sandwiched between a GaSb emitter barrier layer and a GaInAsSb-system collector barrier layer, which results in preventing hot electrons of unnecessarily high energy from being injected into the collector and an avalanche current from being generated, thereby making it possible to improve the saturation characteristics of the device.

REFERENCES:
Applied Physics Letters, vol. 51, #13, pp. 984-986, Sep. 1987 by Levi et al.

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