Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-07-16
2000-02-01
Niebling, John F.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438158, 438160, H01L 2100
Patent
active
060202149
ABSTRACT:
In a large-sized liquid crystal display panel formed through multiple time exposure using a single mask, the storage capacity between a gate and a source of TFT is adjusted by making an offset for exposure at the exposure connecting portion to decrease variations in the feedthrough voltage in a screen. Further, by preparing the layout of an exposure mask such that the overlap area between a gate signal wire or a storage wire and a pixel electrode is made smaller the farther the overlap area is from a gate signal input part. By making the overlap area smaller, the storage capacity is made smaller, which decreases the variation of the feedthrough voltage in the single exposure area.
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Sukegawa Osamu
Watanabe Takahiko
Lebentritt Michael S.
NEC Corporation
Niebling John F.
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