Method for making ferroelectric semiconductor device

Details Method for making ferroelectric semiconductor device Method for making ferroelectric semiconductor device

1998-04-29

2000-02-01

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

H01L 2100

Patent

active

060202130

ABSTRACT:
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (13) of ferroelectric material disposed on a semiconductor substrate (11) and a gate electrode (17) formed on a portion (26) of the layer (13) of ferroelectric material. The portion (26) of the layer (13) of ferroelectric material sandwiched between a semiconductor substrate (11) and a gate electrode (17) retains its ferroelectric activity. The portions (21, 22) of the layer (13) of ferroelectric material adjacent the portion (26) are damaged and thereby rendered ferroelectrically inactive. A source contact (31) and a drain contact (32) are formed through the damaged portions (21, 22) of the layer (13) of ferroelectric material.

REFERENCES:
patent: 4047214 (1977-09-01), Francombe et al.
patent: 4161038 (1979-07-01), Wu
patent: 5424238 (1995-06-01), Sameshima
patent: 5621681 (1997-04-01), Moon
patent: 5654568 (1997-08-01), Nakao

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