X-y Infrared CCD sensor and method for making same

Details X-y Infrared CCD sensor and method for making same X-y Infrared CCD sensor and method for making same

1980-08-28

1983-06-28

Edlow, Martin H.

357 24LR, H01L 2714

Patent

active

043908888

ABSTRACT:
An x-y infrared CCD sensor employing the photoelectric effect as in a p-doped semiconductor substrate of silicon with an n.sup.+ pn diode as the infrared sensor element with a three layer structure in the vertical direction in the semiconductor substrate and a n-channel charge coupled device shift register. The device has a metal-oxide-semiconductor storage electrode directly adjacent to the n-region of the three layer structure. The device is manufactured by masked ion implantation with the doping density for the three layer sequence such that the doping density for the layer operating as the emitter is greater than the doping density for the layer operating as a base, which in turn is greater than the doping density for the layer operating as the collector.

REFERENCES:
patent: 4100672 (1978-07-01), King
patent: 4139784 (1979-02-01), Sauer
patent: 4142198 (1979-02-01), Finnila
patent: 4155094 (1979-05-01), Ohba et al.
patent: 4275407 (1981-06-01), Lorenze, Jr.
patent: 4316205 (1982-02-01), Aoki
patent: 4318115 (1982-03-01), Yoshikawa et al.

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