Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-10-22
1992-06-23
Heyman, John S.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
3072962, 307475, 36518909, 365226, H03K 301
Patent
active
051245744
ABSTRACT:
The semiconductor integrated circuit of the invention comprises a circuit for generating a high voltage or a low voltage exceeding the voltage range between the power source potential and grounding potential, and a circuit for generating plural internal signals so as to reduce the time difference of the mutual transition timings among plural internal signals when the power source potential supplied from outside is raised, being composed so as to decrease the absolute value of the high voltage or low voltage by using the plural internal signals. In such a configuration, when an excessive power source potential close to the maximum rated potential exceeding the standard power source potential is supplied from outside, the absolute value of the high voltage or low voltage may be automatically reduced. As a result, malfunction or breakdown of gate oxide film due to application of an intense electric field in the PN junction may be securely prevented, so that the reliability of the semiconductor integrated circuit may be enhanced.
REFERENCES:
patent: 3962591 (1976-06-01), Popka
patent: 4000412 (1976-12-01), Rosenthal et al.
patent: 4628214 (1986-12-01), Leuscher
patent: 4705966 (1987-11-01), Van Zanten
patent: 4733108 (1988-03-01), Truong
patent: 5023465 (1991-06-01), Douglas et al.
Heyman John S.
Matsushita Electronics Corporation
Ouellette Scott A.
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