Method for fabricating a silicon carbide substrate

Details Method for fabricating a silicon carbide substrate Method for fabricating a silicon carbide substrate

1988-11-16

1991-01-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 86, 437974, 437 84, 148DIG135, 148DIG148, H01L 2118, H01L 21302

Patent

active

049835386

ABSTRACT:
Two methods for fabricating semiconductor substrate having a SOI structure by .beta.-SiC, that is .beta.-SiC on insulator structure, are disclosed. In the first method, two substrates are prepared, the first substrate is silicon coated by SiO.sub.2, the second substrate is silicon on which .beta.-SiC is hereto-epitaxially grown. These substrates are bonded to each other by heating. During the heating process, anodic bonding may be applied. Then, the bonded substrate is ethced or mechanically polished off from the side of the second substrate, to expose the .beta.-SiC layer. In the second method, .beta.-SiC is grown on a silicon substrate. The surface of the substrate is coated with SiO.sub.2, and then, polysilicon or poly-SiC is deposited on the surface of the .beta.-SiC side. The substrate is then etched or mechanically polished from the side of the silicon substrate to expose the .beta.-SiC.

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