Pixel cells having integrated analog memories and arrays thereof

Television – Camera – system and detail – Solid-state image sensor

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348310, 348315, 257233, H04N 5335

Patent

active

058086765

ABSTRACT:
Image transduction device pixel cells are described which have analog memory integrated with the pixel transduction elements and arrays made from such pixel cells. The integrated pixel cells are capable of storing information which, for example, can achieve a desired transduction transfer function for a given pixel transduction element. While the present invention may be used with any type of continuously variable, settable, and nonvolatile analog memory, the analog memory is beneficially based on a ferroelectric gate transistor comprised of an amorphous silicon transistor integrated with a ferroelectric gate dielectric layer or an amorphous silicon transistor with a charge storage dielectric gate layer.

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patent: 5355165 (1994-10-01), Kosonocky et al.
IBM Technical Disclosure Bulletin, vol. 15 No. 9, Feb 1973, P,2825, "Ferroelectric FET Device" by Arnett.

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