High gain latching Darlington transistor

Details High gain latching Darlington transistor High gain latching Darlington transistor

1979-03-30

1981-10-13

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252A, 307315, H03K 1712, H03K 1760, H03K 1772

Patent

active

042950597

ABSTRACT:
A high gain latching Darlington transistor comprises a gate turn-off thyristor and a load transistor coupled in Darlington configuration. Circuit means including a diode are coupled to the gate turn-off thyristor and the transistor to provide a low loss path for load transistor current which reverse biases the gate-cathode junction of the thyristor at thyristor turn-off to prevent premature device conduction. The latching Darlington transistor configured in this manner thus operates as a conventional gate turn-off thyristor, capable of being pulsed into and out of conduction, but yet exhibits improved dv/dt capability and increased turn-off gain, typically between 10 and 100 times the turn-off gain of the individual gate turn-off thyristor.

REFERENCES:
patent: 3265909 (1966-08-01), Gentry
patent: 4112315 (1978-09-01), Ohhinata
patent: 4138690 (1979-02-01), Mawa et al.
patent: 4162413 (1979-07-01), Akamatsu
patent: 4188548 (1980-02-01), Ohhinata

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