Method of manufacturing by autoalignment an integrated semicondu

Fishing – trapping – and vermin destroying

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Details

Other Related Categories

437195, 437944, 148DIG100, H01L 2128

Type

Patent

Status

active

Patent number

051242753

Description

ABSTRACT:
A method of manufacturing by autoalignment an integrated semiconductor device is set forth comprising the realization on respective semiconductor layers of a first encapsulated electrode contact E provided with spacers and of a second autoaligned electrode contact B on the first contact thus equipped, which process comprises at least: a.sub.0) the formation of a first and a second semiconductor layer for receiving the first and the second electrode contact, respectively; b.sub.0) the formation by a so-called image reversal method of an opening B.sub.o with overhanging sides in a photoresist layer deposited on the first semiconductor layer; c.sub.0) the deposition of a first metal layer forming the first electrode contact E in this opening, which contact has sides F.sub.2 of a lower height than those F.sub.1 of the photoresist layer, these sides F.sub.2 having upper edges which are situated laterally at a small distance from the overhanging sides F.sub.1 of the opening, thus leaving an aperture around the base of the first contact; d.sub.0) the deposition of a first dielectric layer of a thickness greater than the value of the said small distance, which dielectric layer encapsulates the first contact without filling up the aperture; e.sub.0) the lift-off of the dielectric and metallic layers around the first contact E, which remains encapsulated; f.sub.0) the realization of spacers around the first encapsulated contact E.

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patent: 4755477 (1988-07-01), Chao
patent: 4824800 (1989-04-01), Takano
patent: 4889821 (1989-12-01), Selle et al.
patent: 4889824 (1989-12-01), Selle et al.
patent: 4904612 (1990-02-01), Zwicknagl et al.
patent: 5001079 (1991-03-01), Van Laarhoven et al.

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