High electron mobility single heterojunction semiconductor devic

Details High electron mobility single heterojunction semiconductor devic High electron mobility single heterojunction semiconductor devic

1986-06-02

1991-05-07

James, Andrew J.

357 232, 357 4, 357 15, 357 16, 357 24, 357 55, 357 56, H01L 2980, H01L 2978

Patent

active

RE0335843

ABSTRACT:
A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. A channel constituted with this electron accumulation enjoys an excellent electron mobility, particularly at cryogenic temperatures. A layer configuration fabricated with two different semiconductors having different electron mobilities and a similar crystal lattice coefficient, and including a single heterojunction, is effective to improve electron mobility. Such a layer configuration can be employed for production of an active semiconductor device with high electron mobility, resulting in high switching speed. The semiconductor devices including a FET, a CCD, etc., exhibit an excellent transfer conductance Gm.

REFERENCES:
patent: 3263095 (1966-07-01), Fang
patent: 3767984 (1973-10-01), Shinoda et al.
patent: 4021833 (1977-05-01), Curnee
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4157556 (1979-06-01), Decker et al.
patent: 4173764 (1979-11-01), Cremoux
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4471360 (1984-09-01), Delagebeaudeuf et al.
Zeidenbergs et al., "A Proposed Heterojunction Field-Effect Transistor", IEEE, vol. 54, No. 12, p. 1960, Dec., 1966.
Dingle, R., et al., "Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices", Appl. Phys. Lett., Oct. 1, 1978, pp. 665-667.
Stormer, E. L., et al., "Two-Dimensional Electron Gas at a Semiconductor-Semiconductor Interface", Sol. St. Comm., vol. 29, Mar. 1979, pp. 705-709.
Tsui, D. C., et al., "Observation of Two-Dimensional Electrons in LPE-Grown GaAs Al.sub.x Ga.sub.1-x As Heterojunctions", Appl. Phys. Lett., Jul. 15, 1979, pp. 99-101.
Abstreiter, G., et al., "Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-Al.sub.x Ga.sub.1-x As Heterojunctions", Phys. Rev. Lett., May 7, 1979, pp. 1308-1311.
Dingle, R., et al., "Electronic Properties of the GaAs-AlGaAs Interface with Applications to Multi-Interface Heterojunction Superlattices", Yamada Conference, Sep. 1979, pp. 30-43.
Plook, K., "Anreicherung von Ladungstragern an der Grenzflache zweier Halbleiter mit unter schiedlichem Bandabstand", Electronik Industrie, Oct. 1979, pp. 13-14.
Best, J. S., "The Schottky-Barrier Height of Au on n-Ga.sub.1-x Al.sub.x As as a Function of AlAs Content", Appl. Phys. Lett., Apr. 4, 1979, pp. 522-524.
Sze, S. M. Physical of Semiconductor Devices, pp. 370-371, 444-445, and 462-465 (1969).

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