PNPN thyristor

Details PNPN thyristor PNPN thyristor

1987-12-22

1989-05-09

Clawson, Jr., Joseph E.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 372 50, H01L 2974

Patent

active

048293571

ABSTRACT:
A pnpn thyristor comprises an anode and cathode region, and a base region which is positioned between the anode and cathode regions. The base region is composed of a p-base layer facing the cathode region, and a first to third n-base layers. Among the first to third n-base layers, the first n-base layer faces the p-base layer, and the third n-base layer faces the anode region. The anode and cathode regions are wider in their forbidden bandwidth than the first and third n-base layers, and the second n-base layer is narrower in its forbidden bandwidth than the first and third n-base layers so that an optical coupling property is improved, and a high output of light is obtained.

REFERENCES:
patent: 4438446 (1984-03-01), Tsang
patent: 4512022 (1985-04-01), Tsang
patent: 4658402 (1987-04-01), Kobayashi
T. Terakado et al., The Institute of Electronics, Information and Communication Engineers, 1985, "Light Amplification Using Bistable Laser Diode", p. 886.
Taylor et al, "A New Double Heterostructure . . . Epitaxy", J. Appl. Phys., 59(2), Jan. 15, 1986, pp. 596-600.

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